2SK4145参数：84A/60V/84W电动车控制器专用
DESCRIPTION
The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 42 A)
Low input capacitance
Ciss = 5300 pF TYP.
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
2SK4145-S19-AY Note Pure Sn (Tin) Tube 50 p/tube TO-220 typ. 1.9 g
Note Pb-free (This product does not contain Pb in the external electrode).
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±84 A
Drain Current (pulse) Note1 ID(pulse) ±215 A
Total Power Dissipation (TC = 25°C) PT1 84 W
Total Power Dissipation (TA = 25°C) PT2 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 32 A
Single Avalanche Energy Note2 EAS 102 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance Rth(ch-C) 1.49 °C/W
Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W