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| 型号 MBI1816GT | | 型号 MUR8120 | | 型号 RHRP8120 | | 型号 HY301A | | 型号 XL4015E1 | | 型号 WRB1209S-3WR2 | | 型号 WRB1205S-3WR2 | | 型号 WRB1212S-3WR2 |
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产品型号 | FDA38N30 | 品牌 | Fairchild | 封装 | TO-3P | 价格 | 电询 | 描述 | N沟道场效应管 | 查看资料 | FDA38N30 | |
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产品说明
FDA38N30:N-Channel MOSFET300V, 38A, 0.085 Features:RDS(on) = 0.07 ( Typ.) @ VGS = 10V, ID = 19A;Low gate charge ( typical 60 nC);Low Crss ( typical 60 pF). Fast switching:100% avalanche tested;Improved dv/dt capability;ESD Improved capability;RoHS CompliantDescriptionThese N-Channel enhancement mode power field effect transis-tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.
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