FQL40N50参数：40A,500V,大功率三极管
FQL40N50 500V N-Channel MOSFET General
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, motor drive and welding machine.
Features
40A, 500V, RDS(on) = 0.11Ω @VGS = 10 V
Low gate charge ( typical 155 nC)
Low Crss ( typical 95 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability Absolute Maximum Ratings TC = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQL40N50 Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 40 A - Continuous (TC = 100°C) 25 A IDM Drain Current - Pulsed (Note 1) 160 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1780 mJ IAR Avalanche Current (Note 1) 40 A EAR Repetitive Avalanche Energy (Note 1) 46 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 460 W - Derate above 25°C 3.7 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case --0.27 °C/W RθCS Thermal Resistance, Case-to-Sink 0.1 --°C/W RθJA Thermal Resistance, Junction-to-Ambient --30 °C/W • • • • • • • • S D G TO-264 FQL Series G D S