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产品型号 | FQA10N80C | 品牌 | ON/Fairchild | 封装 | TO-3P | 价格 | 电询 | 描述 | N沟道场效应管10A800V | 查看资料 | FQA10N80C | |
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产品说明
制造商: ON Semiconductor 产品种类: MOSFET RoHS: 详细信息 技术: Si 安装风格: Through Hole 封装 / 箱体: TO-3PN-3 通道数量: 1 Channel 晶体管极性: N-Channel Vds-漏源极击穿电压: 800 V Id-连续漏极电流: 10 A Rds On-漏源导通电阻: 1.1 Ohms Vgs - 栅极-源极电压: 30 V 最小工作温度: - 55 C 最大工作温度: + 150 C Pd-功率耗散: 240 W 配置: Single 通道模式: Enhancement 商标名: QFET 封装: Tube 高度: 20.1 mm 长度: 16.2 mm 系列: FQA10N80C_F109 晶体管类型: 1 N-Channel 宽度: 5 mm 商标: ON Semiconductor / Fairchild 下降时间: 80 ns 产品类型: MOSFET 上升时间: 130 ns 工厂包装数量: 450
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