Complementary High-Density Trench MOSFET(30V,6A/-30V,-5A)互补型高密度沟槽MOSFET  （30V、6A；-30V、-5A）  

PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)

VDSS ID RDS(on) (mΩ) Typ. VDSS ID RDS(on) (mΩ) Typ.

30V 6 A

22@ VGS = 10V, ID=6A

-30V -5A

33@ VGS = 10V, ID=5A

34@ VGS = 4.5V, ID=4.6A 56@ VGS = 4.5V, ID=4A

Features

 Super high density cell design for 

extremely low RDS(ON)

 2*N+2*P Channels in an SOP-8L 

Package

 Lead（Pb）-free and halogen-free

Applications

 Motor control and drive

 Audio Outputs